Volume 31, Issue 1 (Jun 2012)                   jame 2012, 31(1): 51-56 | Back to browse issues page

XML Persian Abstract Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

A. Bahari, M. Roodbari Shahmiri, N. Mirnia. Comparison of Nano Structural Properties of Al2O3 and TiO2 Films. jame. 2012; 31 (1) :51-56
URL: http://jame.iut.ac.ir/article-1-536-en.html
Department of Physics, University of Mazandaran, Babolsar , a.bahari@umz.ac.ir
Abstract:   (3404 Views)
Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si(100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric for future MISFET (Metal – Insulator- Semiconductor- Field – Effect- Transistors) devices.
Full-Text [PDF 275 kb]   (787 Downloads)    
Type of Study: Research | Subject: General
Received: 2015/02/9 | Accepted: 2015/05/6 | Published: 2015/05/6

Add your comments about this article : Your username or Email:

Send email to the article author

© 2020 All Rights Reserved | Journal of Advanced Materials in Engineering (Esteghlal)

Designed & Developed by : Yektaweb