تحلیل تغییرات ریزساختاری، مورفولوژی و خواص نوری سطح لایه‌های نازک اکسید مس در اثر بازپخت جهت کاربرد در دستگاه‌های الکترونیک نوری

نوع مقاله : مقاله پژوهشی

نویسنده

دانشکده مهندسی مواد، دانشگاه پیام نور، تهران 3697-19395، ایران

چکیده

در این پژوهش، اثر بازپخت حرارتی بر لایه‌های نازک اکسید مس بررسی شده است. در این مطالعه به بررسی ویژگی‌های سطحی لایه‌های نازک مس، با هدف استفاده از آن‌ها به‌عنوان لایه‌های فعال در دستگاه‌های الکترونیک نوری مانند سلول‌های خورشیدی و آشکارسازهای نوری، پرداخته شده است. لایه‌های نازک اکسید مس روی زیرلایه‌های شیشه‌ای با پوشش‌دهی چرخشی رسوب داده شدند. نمونه‌ها در هوا در فشار اتمسفر و در دماهای مختلف از 200 تا 600 درجه سانتی‌گراد بازپخت شدند. خواص ریزساختاری، مورفولوژیکی و نوری سطح لایه‌های نازک با تکنیک‌های تشخیصی مانند پراش پرتو ایکس، طیف‌سنجی رامان، طیف‌سنجی مرئی- فرابنفش، میکروسکوپ الکترونی روبشی و طیف‌سنجی فوتوالکترون پرتو ایکس مورد مطالعه قرار گرفت. ضخامت لایه‌های اکسید مس حدود 760 نانومتر بود. نتایج نشان داد که میزان بلورینگی و اندازه دانه با افزایش دمای بازپخت افزایش و تنش مؤثر شبکه و چگالی دررفتگی‌ها کاهش می‌یابد. تجزیه و تحلیل طیف‌سنجی فوتوالکترون پرتو ایکس نشان داد که فیلم‌های اکسید مس رسوب یافته دارای ترکیبات Cu1+ (Cu2O) و Cu2+ (CuO) هستند و با افزایش دمای بازپخت، غلظت CuO افزایش می‌یابد. تجزیه و تحلیل طیف‌سنجی نوری نشان داد که فیلم‌های نازک در ناحیه مرئی جذب‌کننده و در ناحیه نزدیک به فروسرخ شفاف هستند. با افزایش دمای بازپخت به بالاتر از 400 درجه سانتی‌گراد، طیف بازتابی تغییر می‌کند که به دلیل افزایش پراکندگی ناشی از رشد اندازه بلورها و زبری سطح است. 

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Analysis of Microstructural Changes, Morphology and Optical Properties of the Surface of Copper Oxide Thin Layers due to Annealing for Use in Optoelectronic Devices

نویسنده [English]

  • F. Soleymani
Department of Materials Engineering, Payame Noor University, Tehran 19395-3697, Iran
چکیده [English]

In this study, the effect of thermal annealing on copper oxide thin films was investigated. The surface properties of copper thin films were examined with the goal of employing them as active layers in optoelectronic devices such as solar cells and optical detectors. Thin layers of copper oxide were deposited on glass substrates by spin coating method. The samples were annealed in air at atmospheric pressure and at different temperatures from 200°C to 600°C. The microstructural, morphological, and optical properties of the surface of thin films were studied by diagnostic techniques such as X-ray diffraction, Raman spectroscopy, ultraviolet-visible absorption spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. The thickness of copper oxide layers was about 760 nm. The results indicated that the degree of crystallinity improves with increasing annealing temperature, while the values of the strain and dislocation density decrease. XPS analysis showed that deposited copper oxide films have Cu1+ (Cu2O) and Cu2+ (CuO) compounds, and CuO concentration increases with increasing the annealing temperature. Ultraviolet-visible  absorption spectroscopy showed that the thin films are absorbent in the visible region and transparent in the near-infrared region. As the annealing temperature increases above 400 °C, the reflection spectrum changes due to the increase in scattering caused by the growth of crystallite size and surface roughness.

کلیدواژه‌ها [English]

  • Copper oxide
  • Thin films
  • X-ray photoelectron spectroscopy
  • Optical properties
  • Morphology

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مواد پیشرفته در مهندسی
دوره 43، شماره 2
شهریور 1403
صفحه 17-28

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