سنتز نانوهرم‌های وارونه سیلیکونی و مطالعه رفتار خود تمیزشوندگی آنها

نویسندگان

آزمایشگاه (RF MEMS and Bio-Nano Electronics (MBNE، بخش مهندسی برق، دانشگاه شهید باهنر کرمان، کرمان، ایران

چکیده

در این پژوهش، سنتز نانوهرم‌های وارونه روی بستر سیلیکونی تک‌بلوری بررسی شد. این ساختارها طی فرایند MACE و با استفاده از فلز مس در محلول نیترات مس، هیدروژن پراکساید و هیدروفلوئوریک اسید در زمان‌های زدایش مختلف تهیه شدند. نتایج به‌دست آمده از تصاویر میکروسکوپی الکترونی روبشی گسیل میدانی نشان دادند که زمان، فاکتور مهمی در شکل‌گیری نانوساختارهای هرم وارونه بوده و با افزایش زمان سنتز، ساختارها به‌مرور از بین می‌رود. پس از سنتز، برخی از نمونه‌ها به‌مدت یک دقیقه در محلول پتاسیم هیدروکسید دو درصد و شش درصد ایزوپروپیل الکل شدند که سبب شکل‌گیری هرم‌های نانومتری در کنار نانوهرم‌های وارونه روی سطح سیلیکون شد. رفتار خود تمیزشوندگی سطح سیلیکون تحت تأثیر این ساختارهای ترکیبی قرار گرفت. برای بررسی مشخصه‌های بلوری ساختارهای سنتز شده از الگوی پراش پرتو ایکس (XRD) استفاده شد. به‌علاوه رفتار خود تمیزشوندگی نمونه‌ها مطالعه شد. نتایج نشان داد که نانو‌هرم‌های وارونه رفتار آب‌دوستی سطح سیلیکونی را تقویت می‌کنند درحالی که پس‌زدایش، رفتار آب‌گریزی سطح را بهبود می‌دهد. این ساختارها با توجه به داشتن خاصیت جذب نور و رفتار خود تمیزشوندگی مناسب، می‌توانند در بهبود عملکرد سلول‌های خورشیدی مورد استفاده قرار گیرند.

کلیدواژه‌ها


عنوان مقاله [English]

Synthesis of the Silicon Inverted Nano- Pyramids and Study of Their Self- Cleaning Behavior

نویسندگان [English]

  • F. mansouri
  • M. Mehran
RF MEMS and Bio-Nano Electronics (MBNE) Lab, Department of Electrical Eng., Shahid Bahonar University of Kerman, Kerman, Iran.
چکیده [English]

In this paper, synthesis of inverted nano-pyramids on a single crystal silicon surface through a simple and cost-effective wet chemical method is surveyed. These structures were synthesized by MACE process using Cu as the assisted metal in the solution of copper nitrate, hydrogen peroxide and hydrofluoric acid for different etching times. FE-SEM images of the samples show that time is an important factor in the formation of silicon inverted nano-pyramids and by extending synthesis time the structures gradually fade. After synthesis, some samples were etched in KOH 2% and IPA 6% for one minute which resulted in formation of nano-pyramids besides inverted nano-pyramids on the silicon surface. Formation of these combinational structures affected the self-cleaning behavior of the silicon surface. X-ray diffraction (XRD) was utilized for studying the crystalline characteristics of the synthesized structures. Moreover, the self-cleaning behavior of them was studied using the contact angle goniometer. The results showed that the inverted nano-pyramids improve the hydrophilic behavior of the silicon surface while post-synthesized etching improves the hydrophobic behavior of the surface. These textures improve the performance of solar cells due to their self-cleaning and light adsorption properties

کلیدواژه‌ها [English]

  • Inverted nano-pyramid
  • MACE
  • Copper nitrate
  • post synthesize etching
  • Self-cleaning
  • contact angle
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