بررسی تأثیر ترکیب شیمیایی و دمای تف جوشی بر خواص مکانیکی نانوکامپوزیت SiC-5TiB2 تقویت شده توسط گرافن کوانتوم دات با استفاده از روش طراحی آزمایش تاگوچی

نوع مقاله : مقاله پژوهشی

نویسندگان

دانشگاه صنعتی مالک اشتر، دانشکده مهندسی مواد، تهران، ایران

چکیده

هدف از این تحقیق، ساخت و بررسی خواص نانوکامپوزیت‌های SiC-5TiB2 تقویت شده با نانوذرات گرافن کوانتوم دات به روش ساخت تف‌جوشی بدون فشار می‌باشد. بدین ترتیب مواد اولیه SiC، TiB2 و گرافن کوانتوم دات در ابعاد نانومتری مورد استفاده قرار‌ گرفتند. ابتدا پیش از انجام هرگونه اقدامی، با استفاده از نرم‌افزار Minitab 14 طراحی نمونه‌های آزمایشی صورت گرفت. طراحی با روش تاگوچی مطابق با آرایه L9 انجام شد و پارامترهای میزان تقویت‌شونده گرافن کوانتوم دات در سه سطح 0/2 و 0/6 و 1 درصد وزنی و دمای تف جوشی در مقادیر 2000، 2100 و 2200 درجه سانتی‌گراد تعریف شدند. فرآیند تف‌جوشی در دماهای مشخص در اتمسفر آرگون به مدت زمان دو ساعت انجام شد. در ادامه، آنالیزهای پراش اشعه ایکس، طیف‌سنجی رامان، میکروسکوپ الکترونی روبشی نشر میدانی و طیف‌سنجی تبدیل فوریه مادون قرمز صورت گرفت. همچنین از آزمون‌های تعیین چگالی، میکروسختی و چقرمگی شکست به‌منظور بررسی خواص فیزیکی و مکانیکی استفاده شد. ریز ساختار نمونه‌ها نیز با هدف بررسی مکانیزم‌های چقرمگی شکست مورد بررسی واقع شدند. نتایج نشان داد که پارامتر میزان تقویت‌شونده در رده اول تأثیر‌گذاری و دمای تف‌جوشی در رده دوم قرار دارد و بهترین نتایج در نمونه با مقدار 0/6 درصد وزنی گرافن کوانتوم دات و دمای تف‌جوشی 2100 درجه سانتی‌گراد حاصل شده است که میزان سختی و چقرمگی شکست دراین نمونه به‌ترتیب 27/7 گیگاپاسکال و MPa.m1/2 3/3 به‌دست آمد.

کلیدواژه‌ها

موضوعات


عنوان مقاله [English]

Investigating the Effect of Chemical Composition and Sintering Temperature on Mechanical Properties of SiC-5TiB2 Nano Composite Reinforced by Graphene Quantum dot using Taguchi Test Design Method

نویسندگان [English]

  • M. Nazari
  • H. R. Baharvandi
  • N. Ehsani
Composite Materials & Technology Center, Malek Ashtar University of Technology, Tehran, Iran
چکیده [English]

The purpose of this research was to fabricate and investigate the properties of SiC-5TiB2 nano composites reinforced by gaphene quantum dot nanoparticles via pressure less sintering method. In this way, SiC, TiB2, and graphene quantum dot raw materials were used in nanometer dimensions. First, before performing any laboratory operations, experimental samples were designed using Minitab 14 software. The design was done by the Taguchi method according to the L9 array and the parameters of the amount of gaphene quantum dot amplification in three levels were set at 0.2, 0.6, and 1 wt.% and sintering temperatures were defined as 2000, 2100, and 2200°C. The sintering process was carried out at certain temperatures in argon atmosphere for 2 h. XRD, FESEM, FTIR and Raman spectroscopy were performed. Density, micro hardness, and fracture toughness measurements were used for further investigations of physical and mechanical properties. The microstructure of the samples was also observed to determine the fracture toughness mechanisms. The results showed that the parameter of the amount of reinforcement was in the first rank of influence and the sintering temperature was in the second rank, and the best results were obtained in the sample with the amount of 0.6 wt.% of gaphene quantum dot and the sintering temperature of 2100 °C, where hardness and fracture toughness values were obtained to be 27.7 GPa and 3.3 MPa.m1/2, respectively.

کلیدواژه‌ها [English]

  • SiC
  • Graphene quantum dot
  • SiC-5TiB2 nanocomposite
  • Sintering
  • Taguchi
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