نقش عملیات آنیل بر ویژگی‌های فیلم‌های سیلیکونی ایجاد شده به‌روش EB-PVD

نویسندگان

سازمان پژوهش‌های علمی و صنعتی ایران، پژوهشکده مواد پیشرفته و انرژی‌های نو، تهران، ایران

چکیده

این پژوهش، به بررسی ویژگی‌های ساختاری و اپتیکی فیلم‌های چنددانه سیلیکون حاصل از اعمال تکنولوژی تبخیر پرتو الکترونی فاز بخار (EB-PVD) روی ویفر سیلیکونی، اختصاص دارد. این فیلم‌ها ابتدا آمورف بوده و طی آنیل به یک فاز جامد بلوری گذار کردند. آنیل در کوره تیوبی تحت اتمسفر گاز خنثی در دماهای مختلف انجام شد. ریزساختار فیلم‌ها برای درک ارتباط بین ترکیب بلوری / آمورف، اندازه دانه و مشخصات فیلم‌ها، مورد بررسی قرار گرفت. نتایج نشان‌دهنده کاهش زبری با افزایش دمای آنیل و افزایش تراکم ساختاری است. همچنین، نتایج حاصل از طیف میکرو رامان نشان‌دهنده تشکیل و افزایش میزان نانوبلور‌های سیلیکون در شرایط آنیل و همچنین با افزایش ضخامت پوشش بر اثر عیوب ساختاری بود.

کلیدواژه‌ها


عنوان مقاله [English]

The Role of Annealing on Properties of Silicon Films Deposited By EB-PVD

نویسندگان [English]

  • M. Zarchi
  • Sh. Ahangarani
Advanced Materials & Renewable Energies Department, Iranian Research Organization for Science and Technology, Tehran, Iran.
چکیده [English]

The structural and optical properties of polycrystalline silicon films obtained on a silicon wafer by electron beam physical vapor deposition (EBPVD), were studied in this paper. These films were initially amorphous and changed to a crystalline solid phase during annealing. Annealing was performed in an inert gas atmosphere tube furnace at different temperatures. Micro-structure of the films was analyzed to know the relationship between the crystalline / amorphous composition, grain size and characteristics of the films. The results showed a decrease in roughness with increasing annealing temperature and structural density. Moreover, results of Micro-Raman spectrum showed formation and increase of silicon nanocrystals in the annealed condition when the thickness of the coating increased due to structural defects.

کلیدواژه‌ها [English]

  • annealing
  • Amorphous silicon
  • EBPVD
  • Surface morphology
  • Nano-Crystal
1. Jun-Chin, L., Chen-Cheng, L., and Yu-Hung, C., “Enhancing Light-Trapping Properties of Amorphous Si Thin-Film Solar Cells Containing High-Reflective Silver Conductors Fabricated using a Nonvacuum Process” , International Journal of Photoenergy, Vol. 2014, pp. 1-5, 2014. doi.org/10.1155/2014/627127.
2. Cheng, Q., Zeng, Y., and Huang, J., “Effect of Substrate Temperature on Conductivity and Microstructures of Boron-Doped Silicon Nanocrystalsin SiOx Thin Films”, Physica, Vol. e53, pp. 36-40, 2013.
3. Li, M., Li, J., and Jiang, Q., “Size-Dependent Band-Gap and Dielectric Constant of Si Nanocrystals”, International Journal of Modern Physics, Vol. B24, pp. 2297-2301, 2010.
4. Dmitriev, P., Makarov, S., and Milichko, A., “Laser Fabrication of Crystalline Silicon Nanoresonators from an Amorphous Film for Low-Loss All-Dielectric Nanophotonics”, Nanoscale, Vol. 8, pp. 5043-5048, 2016. doi.org/10.1039/C5NR06742A
5. Mercaldo, L., and Usatii, I., “Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys”, Energies, Vol. 9, No. 3, p. 218, 2016.
6. Melskens, J., Schnegg, A., Baldansuren, A., Lips, K., and Plokker, M. P., “Structural and Electrical Properties of Metastable Defects in Hydrogenated Amorphous Silicon”, Physical Review B, Vol. 91, p. 245207, 2015.
7. Wu, K. H., and Li, Ch., “Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon”, Journal of Materials, Vol. 8, pp. 5922-5932, 2015.
8. Chena, Ch., Lina, P. Y., and Li, T. T., “Kinetic Study of the Thermal Crystallization Behavior of Hydrogenated Amorphous Silicon Prepared by ECRCVD”, Journal of Solid State Science and Technology, Vol. 3, No. 5, 2014. DOI:10.1149/2.018405jss.
9. Kitahara, K., Ishii, T., and Suzuki, J., “Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy”, International Journal of Spectroscopy, Vol. 2011, pp. 1-14, 2011.
10. Xu, X., and Li, Sh., “Silicon Nanowires Prepared by Electron Beam Evaporation in Ultrahigh Vacuum”, Nanoscale Research Letters, Vol. 7, No. 1, p. 243, 2012.
11. Li., Q. “Investigation on Solid-Phase Crystallization Techniques for Low Temperature Polysilicon Thin-Film Transistors”, Thesis. Rochester Institute of Technology, 2013.
12. Etsu, Sh., “Silicon Wafer Cleaning”, MicroSi ,Vol. 480, pp. 893-8898, 2013.
13. Chou, Ch. H., Lee, I. Ch., and Yang, P. Y., “Effects of Crystallization Mechanism on The Electrical Characteristics of Green Continuous-Wave-Laser-Crystallized Polycrystalline Silicon Thin Film Transistors”, Applied Physics Letters, Vol. 103, No. 5, 2013.
14. Lei, K. F., “Materials and Fabrication Techniques for Nano and Microfluidic Devices, in Microfluidics in Detection Science”, Lab-on-a-chip Technologies, Vol. 2014, pp. 1-28, 2014.
15. Sinclair, R., “In Situ High-Resolution Transmission Electron Microscopy of Material Reactions”, Functional Oxide Interfaces, Vol. Vol. 38, No. 12, pp. 1065-1071, 2013.
16. Cristina, R., and Gavrila Obreja, R. A. C., “Microfabrication and Analysis of Polysilicon Thin Layers for MEMS Vibrating Structures”, Analog Integrated Circuits and Signal Processing, Vol. 82, No. 3, pp. 611-620, 2015.
17. Marcins, G., Butikova, J., and Tale, I., “Crystallization Processes of Amorphous Si by Thermal Annealing and Pulsed Laser Processing”, Materials Science and Engineering, Vol. 23, No. 1, p. 012035, 2011.

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